Agnitron Technology (United States)

output

20162025

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations

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cond-mat.mtrl-sci2025

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Guangying Wang, Shuwen Xie, William Brand +10

Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphi…

cond-mat.mtrl-sci2022★ 35 cited

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films

Fikadu Alema, Carl Peterson, Arkka Bhattacharyya +3

We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ epitaxial films. Transfer le…

Single-crystalline high-quality beta-Ga2O3 pseudo-substrate on sapphire through sputtering for epitaxial deposition

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown β-Ga2​O3​ and β-(Alx​Ga1​−x)2​ O3​ Films

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1} - x$ ) $_{2}$ O $_{3}$ Films