42 citations · 229 across the 23 of their papers we have counts for
23 papers
An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, David Jimenez
Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect…
A Taylor Series Approximation Model for Characterizing the Output Resistance of a GFET
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Tzu-Jung Huang +3
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This…
Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
N. Mavredakis, A. Pacheco-Sanchez, R. Garcia Cortadella +3
For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time…
A Scalable Compact Model for the Static Drain Current of Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena +2
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induce…
Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…
Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…
Static and small-signal modeling of radiofrequency hexagonal boron nitride switches
Anibal Pacheco-Sanchez, Omar Jordán-García, Eloy Ramŕez-García +1
A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is pres…
Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…
Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…
Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics
Ferney A. Chaves, Anibal Pacheco-Sanchez, David Jimenez
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical e…
Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis +3
In this study, we report the progress made towards the definition of a modular compact modeling technology for graphene field-effect transistors (GFET) that enables the electrical…
Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels
Anibal Pacheco-Sanchez, Quim Torrent, David Jiménez
The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors (FETs) is evaluated a…
An extraction method for mobility degradation and contact resistance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +1
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different techn…
A small-signal description of black phosphorus transistor technologies for high-frequency applications
Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…
Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs
Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia +1
An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…
Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies
Leslie M. Valdez-Sandoval, Eloy Ramirez-Garcia, David Jiménez +1
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of…
Small-signal parameters extraction and noise analysis of CNTFETs
Javier N. Ramos-Silva, Aníbal Pacheco-Sánchez, Mauro A. Enciso-Aguilar +2
The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This…
A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances
Anibal Pacheco-Sanchez, Javier N. Ramos-Silva, Eloy Ramirez-Garcia +1
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of co…
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…
Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies
Anibal Pacheco-Sanchez, David Jiménez
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degrad…
Contact resistance extraction of graphene FET technologies based on individual device characterization
Anibal Pacheco-Sanchez, Pedro C. Feijoo, David Jiménez
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different…