most citedContact resistance extraction of graphene FET technologies based on individual device characterization

16 citations · 49 across the 5 of their papers we have counts for

collaborators

10 papers

physics.app-ph20216 cited

A small-signal description of black phosphorus transistor technologies for high-frequency applications

Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…

physics.app-ph202110 cited

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia +1

An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase…

physics.app-ph2021

Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications

Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6

The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…

cond-mat.mes-hall2021

Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4

In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…

cond-mat.mes-hall2020

Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

Leslie M. Valdez-Sandoval, Eloy Ramirez-Garcia, David Jiménez +1

In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of…

physics.app-ph20209 cited

Small-signal parameters extraction and noise analysis of CNTFETs

Javier N. Ramos-Silva, Aníbal Pacheco-Sánchez, Mauro A. Enciso-Aguilar +2

The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This…