42 citations · 229 across the 23 of their papers we have counts for
4 papers · 1 filter
A small-signal description of black phosphorus transistor technologies for high-frequency applications
Leslie Valdez-Sandoval, Eloy Ramirez-Garcia, Saungeun Park +3
This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorous field-effect transistors (BPFETs). The proposed EC is ab…
Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs
Javier Noe Ramos-Silva, Anibal Pacheco-Sanchez, Eloy Ramirez-Garcia +1
An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase…
Unveiling the impact of the bias-dependent charge neutrality point on graphene-based multi-transistor applications
Francisco Pasadas, Alberto Medina-Rull, Pedro Carlos Feijoo +6
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conduc…
Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…