42 citations · 229 across the 23 of their papers we have counts for
6 papers · 1 filter
Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics
Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8
Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…
Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…
Static and small-signal modeling of radiofrequency hexagonal boron nitride switches
Anibal Pacheco-Sanchez, Omar Jordán-García, Eloy Ramŕez-García +1
A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is pres…
Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5
1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…
Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…
Gate Tunable Lateral 2D pn Junctions: An Analytical Study of Its Electrostatics
Ferney A. Chaves, Anibal Pacheco-Sanchez, David Jimenez
The electrostatics of two-dimensional (2D) lateral pn homojunctions considering the impact of electrostatic doping by means of two split bottom-gates are studied here. Analytical e…