42 citations · 229 across the 23 of their papers we have counts for
6 papers · 1 filter
Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies
Leslie M. Valdez-Sandoval, Eloy Ramirez-Garcia, David Jiménez +1
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of…
Small-signal parameters extraction and noise analysis of CNTFETs
Javier N. Ramos-Silva, Aníbal Pacheco-Sánchez, Mauro A. Enciso-Aguilar +2
The use of carbon nanotube (CNT) field-effect transistors (FETs) in microwave circuit design requires an appropriate, immediate and efficient description of their performance. This…
A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances
Anibal Pacheco-Sanchez, Javier N. Ramos-Silva, Eloy Ramirez-Garcia +1
A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of co…
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…
Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies
Anibal Pacheco-Sanchez, David Jiménez
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degrad…
Contact resistance extraction of graphene FET technologies based on individual device characterization
Anibal Pacheco-Sanchez, Pedro C. Feijoo, David Jiménez
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different…