Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions

Abstract

We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.

5 pages, 3 figures, submitted to Phys. Rev. Lett

References in corpus (2)

• Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of Fe(001) surface
• Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions

Cited by in corpus (7)

• Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
• Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures
• Anisotropic magnetoresistance in nanocontacts
• Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects
• Spin-orbital coupling effect on Josephson current through a superconductor heterojunction
• Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs
• Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions