Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

Abstract

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the $n-$GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/$n$-GaAs hetrostructures, including Co${}_2$MnSi/$n$-GaAs, Co${}_2$FeSi/$n$-GaAs and Fe/$n$-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

4 pages, 4 figures

References in corpus (5)

• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• On the line shape of the electrically detected ferromagnetic resonance
• Microwave photovoltage and photoresistance effects in ferromagnetic microstrips
• Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

Cited by in corpus (3)

• Electrical Detection of Magnetization Dynamics via Spin Rectification Effects
• Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves
• Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance