Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

Abstract

We describe a new means for electrically creating spin polarization in semiconductors. In contrast to spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe spin accumulation at the metal/semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the non equilibrium carrier polarization.

13 pages, 4 figures, submitted for publication

References in corpus (6)

• Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure
• Dynamical Nuclear Polarization by Electrical Spin Injection in Ferromagnet-Semiconductor Heterostructures
• Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
• Ferromagnetic imprinting of spin polarization in a semiconductor
• Spatial Imaging of Magnetically Patterned Nuclear Spins in GaAs
• Voltage control of nuclear spin in ferromagnetic Schottky diodes

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