Spin-polarized Zener tunneling in (Ga,Mn)As

Abstract

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.

11 pages, 4 figures. Submitted, Physical Review B15 Rapid Communications

References in corpus (1)

• Epitaxy and Magneto-transport properties of the diluted magnetic semiconductor p- Be(1-x)MnxTe

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