Spin inversion devices with Fano anti-resonances

Abstract

Analyzing spin transport of quasi-2D electrons gas moving through a semiconductor wave guide subject to a sectionally homogeneous tilted magnetic field, we found well-defined selection rules for resonant and antiresonant spin carrier transmission. Based on these selection rules and the band shift induced by the magnetic field strength and the tilting angles, we propose an efficient spin inversion device. For a polarized incoming electron beam, we can determine from our theoretical approach, physical conditions for spin-inversion efficiency up to 80%. We visualize this mechanism in terms of conductance and the spacial behavior of the wave function amplitude along the superlattice.

3 pages, 3 figures, regular paper

References in corpus (5)

• Spintronics: Fundamentals and applications
• Semiconductor Spintronics
• Spin-polarized Zener tunneling in (Ga,Mn)As
• Spin filters with Fano dots
• Spin-dependent quantum transport in periodic magnetic modulations: Aharonov-Bohm ring structure as a spin filter

Cited by in corpus (8)

• Fano resonances in nanoscale structures
• Anisotropic quantum transport in monolayer graphene in the presence of Rashba spin-orbit coupling
• Spin-dependent Fano resonance induced by conducting chiral helimagnet contained in a quasi-one-dimensional electron waveguide
• Resonance in the nonadiabatic quantum pumping of the time-dependent Josephson junction
• Fano resonance via bonding and antibonding states in nonadiabatically-pumped double-quantum-well systems
• Spin-filtering and charge- and spin-switching effects in a quantum wire with periodically attached stubs
• Fano resonances in tilted Weyl semimetals in an oscillating quantum well
• The Transfer Matrix Method and The Theory of Finite Periodic Systems. From Heterostructures to Superlattices