Towards the fabrication of phosphorus qubits for a silicon quantum computer

Abstract

The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of such devices however requires atomic scale manipulation - an immense technological challenge. We demonstrate that it is possible to fabricate an atomically-precise linear array of single phosphorus bearing molecules on a silicon surface with the required dimensions for the fabrication of a silicon-based quantum computer. We also discuss strategies for the encapsulation of these phosphorus atoms by subsequent silicon crystal growth.

To Appear in Phys. Rev. B Rapid Comm. 5 pages, 5 color figures

References in corpus (4)

• Quantum Computation with Quantum Dots
• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Experimental realization of a quantum algorithm
• Approximate quantum counting on an NMR ensemble quantum computer

Cited by in corpus (56)

• Quantum Computing
• Atomically precise placement of single dopants in Si
• Charge-based quantum computing using single donors in semiconductors
• Exchange in silicon-based quantum computer architecture
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
• Strain effects on silicon donor exchange: Quantum computer architecture considerations
• Deterministic Ultracold Ion Source targeting the Heisenberg Limit
• Electron Exchange Coupling for Single Donor Solid-State Qubits
• Spin quantum computation in silicon nanostructures
• Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
• Measurement of phosphorus segregation in silicon at the atomic-scale using STM
• Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach
• Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
• External field control of donor electron exchange at the Si/SiO2 interface
• STM characterization of the Si-P heterodimer
• All Optical Implementation of Multi-Spin Entanglement in a Semiconductor Quantum Well
• All-Electrical Quantum Computation with Mobile Spin Qubits
• High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
• Resistless EUV lithography: photon-induced oxide patterning on silicon
• Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
• First-Principle Study of Phosphine Adsorption on Si(001)-2$\times$1-Cl
• Split-off dimer defects on the Si(001)2x1 surface
• Light-harvesting with guide-slide superabsorbing condensed-matter nanostructures
• Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
• Observation of Buried Phosphorus Dopants near Clean Si(100)-(2x1) with Scanning Tunneling Microscopy
• Control of spin dynamics with laser pulses: Generation of entangled states of donor-bound electrons in a Cd1-xMnxTe quantum well
• CMOS Platform for Atomic-Scale Device Fabrication
• All-optical lithography process for contacting atomically-precise devices
• Overview of Spin-Based Quantum Dot Quantum Computation
• Isotopic enrichment of silicon by high fluence ${}^{28}$Si${}^{-}$ ion implantation
• Focusing a deterministic single-ion beam
• Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Electronic properties of delta-doped phosphorus layers in silicon and germanium
• Preservation of entanglement in a two-qubit-spin coupled system
• Simulation of Si:P spin-based quantum computer architecture
• 3-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction
• Structural studies of phosphorus induced dimers on Si(001)
• Exchange between deep donors in semiconductors: a quantum defect approach
• Charge-based silicon quantum computer architectures using controlled single-ion implantation
• Self-aligned fabrication process for silicon quantum computer devices
• Quantum information processing based on P-31 nuclear spin qubits in a quasi-one-dimensional Si-28 nanowire
• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1
• Electronic transport in Si:P delta-doped wires
• Optimisation of electrically-driven multi-donor quantum dot qubits
• Creation of entanglement in a scalable spin quantum computer with long-range dipole-dipole interaction between qubits
• Noise Correlations in a 1D Silicon Spin Qubit Array
• Optimized focusing ion optics for an ultracold deterministic single ion source targeting nm resolution
• Spin Transport in Disordered Two-Dimensional Hopping Systems with Rashba Spin-Orbit Interaction
• Bardeen's tunneling theory applied to intraorbital and interorbital hopping integrals between dopants in silicon
• Problems in realization of large-scale ensemble silicon-based NMR quantum computers
• Influence of qubit displacements on quantum logic operations in a silicon-based quantum computer with constant interaction
• Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds
• Some prospects for ensemble solid-state NMR quantum computers
• Reactivity of the Si(100)-2$\times$1-Cl surface with respect to PH${}_3$, PCl${}_3$, and BCl${}_3$: Comparison with PH${}_3$ on Si(100)-2$\times$1-H