Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures

Abstract

Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed to maximize the signals arising from the SCI processes with conventional mutually orthogonal geometry. However, in low-symmetry materials, certain non-orthogonal SCI processes are also allowed. Since the standard SCI experiment is limited to charge current flowing only in one direction in the SOC material, certain allowed SCI configurations remain unexplored. In this work, we performed a thorough SCI study in a graphene-based lateral spin valve combined with low-symmetry MoTe${}_2$. Due to a very low contact resistance between the two materials, we could detect SCI signals using both a standard configuration, where the charge current is applied along the MoTe${}_2$, and a recently introduced (3D-current) configuration, where the charge current flow can be controlled in three directions within the heterostructure. As a result, we observed three different SCI components, one orthogonal and two non-orthogonal, giving new insight into the SCI processes in low-symmetry materials. The large SCI signals obtained at room temperature, along with the versatility of the 3D-current configuration, provide feasibility and flexibility to the design of the next generation of spin-based devices.

11 pages, 4 figures

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Cited by in corpus (16)

• Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
• Twist-angle tunable spin texture in WSe${}_2$/graphene van der Waals heterostructures
• A seamless graphene spin valve based on proximity to van der Waals magnet Cr${}_2$Ge${}_2$Te${}_6$
• Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves
• Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide
• Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
• Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
• Out-of-plane spin-to-charge conversion at low temperatures in graphene/MoTe${}_2$ heterostructures
• Nonlinear magnetotransport in MoTe${}_2$
• Ferroelectric switching control of spin current in graphene proximitized by In${}_2$Se${}_3$
• Dirac-Rashba fermions and quantum valley Hall insulators in graphene-based 2D heterostructures
• Impact of the out-of-plane conductivity on spin transport evaluation in a van der Waals material
• Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature
• Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe${}_2$
• Radial Rashba spin-orbit fields in commensurate twisted transition-metal dichalcogenide bilayers