Resonantly driven singlet-triplet spin qubit in silicon

Abstract

We report implementation of a resonantly driven singlet-triplet spin qubit in silicon. The qubit is defined by the two-electron anti-parallel spin states and universal quantum control is provided through a resonant drive of the exchange interaction at the qubit frequency. The qubit exhibits long $T_2^{\ast }$ exceeding 1 $\mu$s that is limited by dephasing due to the ${}^{29}$Si nuclei rather than charge noise thanks to the symmetric operation and a large micro-magnet Zeeman field gradient. The randomized benchmarking shows 99.6 % single gate fidelity which is the highest reported for singlet-triplet qubits.

arXiv comment12 pages, 4 figures

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• Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport
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• Valley-Free Silicon Fins Caused by Shear Strain
• Approaching ideal visibility in singlet-triplet qubit operations using energy-selective tunneling-based Hamiltonian estimation
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• Microscopic theory on magnetic-field-tuned sweet spot of exchange interactions in multielectron quantum-dot systems
• Sign-switching of superexchange mediated by few electrons under non-uniform magnetic field
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