Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

Abstract

We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior.

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• Density-tuned effective metal-insulator transitions in 2D semiconductor layers: Anderson localization or Wigner crystallization
• Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells
• Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
• Inducing a metal-insulator transition in disordered interacting Dirac fermion systems via an external magnetic field
• Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
• Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
• Spin and valley effects on the quantum phase transition in two dimensions