Coherent control of defect spins in silicon carbide above 550 K

Abstract

Great efforts have been made to the investigation of defects in silicon carbide for their attractive optical and spin properties. However, most of the researches are implemented at low and room temperature. Little is known about the spin coherent property at high temperature. Here, we experimentally demonstrate coherent control of divacancy defect spins in silicon carbide above 550 K. The spin properties of defects ranging from room temperature to 600 K are investigated, in which the zero-field-splitting is found to have a polynomial temperature dependence and the spin coherence time decreases as the temperature increases. Moreover, as an example of application, we demonstrate a thermal sensing using the Ramsey method at about 450 K. Our experimental results would be useful for the investigation of high temperature properties of defect spins and silicon carbide-based broad-temperature range quantum sensing.

arXiv comment5 pages, 5 figures

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Cited by in corpus (11)

• Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
• Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies
• Temperature dependence of divacancy spin coherence in implanted silicon carbide
• Optimization of the power broadening in optically detected magnetic resonance of defect spins in silicon carbide
• Thermal evolution of silicon carbide electronic bands
• Temperature dependent coherence properties of NV ensemble in diamond up to 600K
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
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• Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC
• Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride