Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS${}_2$

Abstract

We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS${}_2$. Direct comparison between graphene/monolayer WS${}_2$ and graphene/bulk WS${}_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\mathrm{so}}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\to$ $-z$ symmetric SOI can only explain the experimental results. Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistance increase with temperature close to the Dirac point indicates Kane-Mele (KM) SOI induced in graphene.

5 pages, 4 figures

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• Theory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling
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• Electric field tunable spin-orbit gap in a bilayer graphene/WSe${}_2$ quantum dot
• Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe${}_2$ and graphene
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