Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances

Abstract

A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain/source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional field-effect transistors.

arXiv comment8 pages, 10 figures, 4 tables

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• A small-signal GFET equivalent circuit considering an explicit contribution of contact resistances
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• Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments
• Low-frequency noise parameter extraction method for single layer graphene FETs
• Non-quasi-static effects in graphene field-effect transistors under high-frequency operation
• Bias Dependent Variability of Low Frequency Noise in Single Layer Graphene FETs
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
• Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
• Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs