31 citations · 96 across the 6 of their papers we have counts for
7 papers
Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…
Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…
Low-frequency noise parameter extraction method for single layer graphene FETs
Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +7
In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently establish…
Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +6
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications dem…
Optoelectronic mixing with high frequency graphene transistors
Alberto Montanaro, Wei Wei, Domenico De Fazio +6
Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic m…
Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
Francisco Pasadas, Wei Wei, Emiliano Pallecchi +2
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can…