4 papers
Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Paulius Sakalas +4
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observa…
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Anibal Pacheco-Sanchez, Nikolaos Mavredakis, Pedro C. Feijoo +4
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of oppo…
Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +6
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications dem…
Optoelectronic mixing with high frequency graphene transistors
Alberto Montanaro, Wei Wei, Domenico De Fazio +6
Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic m…