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cond-mat.mes-hall2019
Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
Nikolaos Mavredakis, Wei Wei, Emiliano Pallecchi +6
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications dem…
physics.app-ph2019
Optoelectronic mixing with high frequency graphene transistors
Alberto Montanaro, Wei Wei, Domenico De Fazio +6
Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic m…