Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect

Abstract

We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricated by transfer of commercial graphene on low-doped n-type Si substrate, achieves a photoresponse as high as 3 AW^(-1) and a normalized detectivity higher than 3.5 10^12 cmHz^(1/2) W^(-1) in the visible range. The device exhibits a photocurrent exceeding the forward current, because photo-generated minority carriers, accumulated at Si/SiO2 interface of the Gr/SiO2/Si capacitor, diffuse to the Gr/Si junction. We show that the same mechanism, when due to thermally generated carriers, although usually neglected or disregarded, causes the increased leakage often measured in Gr/Si heterojunctions. At room temperature, we measure a zero-bias Schottky barrier height of 0.52 eV, as well as an effective Richardson constant A**=4 10^(-5) Acm^(-2) K^(-2) and an ideality factor n=3.6, explained by a thin (< 1nm) oxide layer at the Gr/Si interface.

arXiv commentResearch paper. 26 pages, 8 figures

References in corpus (16)

• High Efficiency Graphene Solar Cells by Chemical Doping
• Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
• On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain
• Interference effect on Raman spectrum of graphene on SiO_2/Si
• Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
• Ideal Graphene/Silicon Schottky Junction Diodes
• Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes
• Electron Thermionic Emission from Graphene and a Thermionic Energy Converter
• Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
• Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
• Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
• Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
• Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors
• Temperature dependent transport characteristics of graphene/n-Si diodes
• Time- and Space-Modulated Raman Signals in Graphene-based Optical Cavities

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• High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
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