First-Principles Theory for Schottky Barrier Physics

Abstract

We develop a first-principles theory for Schottky barrier physics. The Poisson equation is solved completely self-consistently with the electrostatic charge density and outside the normal density functional theory (DFT) electronic structure iteration loop, allowing computation of a Schottky barrier entirely from DFT involving thousands of atomic layers in the semiconductor. The induced charge in the bulk consists of conduction and valence band charges from doping and band bending, as well as charge from the evanescent states in the gap of the semiconductor. The Schottky barrier height is determined when the induced charge density and the induced electrostatic potential reach self-consistency.

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Cited by in corpus (3)

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• First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi${}_2$(111)/Si(111) interfaces
• Memristive switching in the surface of a charge-density-wave topological semimetal