Chemical assembly of atomically thin transistors and circuits in a large scale

Abstract

Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have challenges due to the complex fabrication techniques required for large-scale applications. Two-dimensional (2D) gapless graphene and semiconducting transition metal dichalcogenides (TMDCs) have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. Difficulties in the assembly of 2D electronic structures arise in the precise spatial control over the metallic and semiconducting atomic thin films. Ultimately, this impedes the maturity of integrating atomic elements in modern electronics. Here, we report the large-scale spatially controlled synthesis of the single-layer semiconductor molybdenum disulfide (MoS2) laterally in contact with conductive graphene. Transition electron microscope (TEM) studies reveal that the single-layer MoS2 nucleates at the edge of the graphene, creating a lateral 2D heterostructure. We demonstrate such chemically assembled 2D atomic transistors exhibit high transconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1 s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverter with a high voltage gain, up to 70, enabled by the precise site selectivity from atomically thin conducting and semiconducting crystals. This scalable chemical assembly of 2D heterostructures may usher in a new era in two-dimensional electronic circuitry and computing.

References in corpus (15)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
• Imaging Grains and Grain Boundaries in Single-Layer Graphene: An Atomic Patchwork Quilt
• Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
• Electrical Control of Second-Harmonic Generation in a WSe2 Monolayer Transistor
• Measurement of mobility in dual-gated MoS2 transistors
• Towards barrier free contact to MoS2 using graphene electrodes
• Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
• Parallel Stitching of Two-Dimensional Materials
• Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
• Low Resistance Metal Contacts to MoS2 Devices with Nickel-Etched-Graphene Electrodes
• MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Cited by in corpus (14)

• Electronic Transport in Two-Dimensional Materials
• Radiation tolerance of two-dimensional material-based devices for space applications
• Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
• Strain Mapping of Two-Dimensional Heterostructures with Sub-Picometer Precision
• Sub-Nanometer Channels Embedded in Two-Dimensional Materials
• One-dimensional edge contacts to a monolayer semiconductor
• Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures
• Intelligent Identification of Two-Dimensional Structure by Machine-Learning Optical Microscopy
• Perylene-Based Non-Covalent Functionalization of 2D Materials
• High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions
• Broadband nonlinear modulation of incoherent light using a transparent optoelectronic neuron array
• CVD Graphene Contacts for Lateral Heterostructure MoS${}_2$ Field Effect Transistors
• Coulomb drag transistor via graphene/MoS2 heterostructures
• PT-symmetric interference transistor