PT-symmetric interference transistor

Abstract

We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: PT-symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realized in particular in a special class of molecules with degenerate energy levels, i.e. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the PT-symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. PT-symmetry broken state at zero gate voltage with minimal transmission corresponds to the 'off' state while the PT-symmetric state at non-zero gate voltage with maximum transmission - to the 'on' state. At zero gate voltage energy of the antiresonance coincides with exceptional point but the transmission variation mainly takes place due to the coalescence of resonances at the exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.

arXiv comment12 pages, 3 figues

References in corpus (6)

• Fano resonances in nanoscale structures
• Observation of Quantum Interference in Molecular Charge Transport
• Chemical assembly of atomically thin transistors and circuits in a large scale
• Quantum Interference in Off-Resonant Transport through Single Molecules
• Green function techniques in the treatment of quantum transport at the molecular scale
• Unified theory of resonances and bound states in the continuum in Hermitian tight-binding models