Van der Waals epitaxial growth of topological insulator BiSbTeSe ultrathin nanoplate on electrically insulating fluorophlogopite mica
arXiv:1407.7675 · doi:10.1063/1.4892576
Abstract
We report the growth of high quality BiSbTeSe ultrathin nanoplates (BSTS-NPs) on an electrically insulating fluorophlogopite mica substrate using a catalyst-free vapor solid method. Under an optimized pressure and suitable Ar gas flow rate, we control the thickness, the size and the composition of BSTS-NPs. Raman spectra showing systematic change indicate that the thicknesses and compositions of BSTS-NPs are indeed accurately controlled. Electrical transport demonstrates that a robust Dirac cone carrier transport in BSTS-NPs. Since BSTS-NPs provide superior dominant surface transport of the tunable Dirac cone surface states with negligible contribution of the conduction of the bulk states, BSTS-NPs provide an ideal platform to explore intrinsic physical phenomena as well as technological applications of 3-dimensional topological insulators in the future.
arXiv comment12 pages, 3 figures, To be published in APL
References in corpus (20)
- Topological Insulators
- Topological insulators and superconductors
- Chiral tunneling and the Klein paradox in graphene
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
- Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential
- Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
- Observation of Dirac Holes and Electrons in a Topological Insulator
- Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime
- Topological delocalization of two-dimensional massless Dirac fermions
- Berry phase of non-ideal Dirac fermions in topological insulators
- Crystal Symmetry Breaking in Few-Quintuple Bismuth Telluride Films: Applications in Nanometrology of Topological Insulators
- Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
- Z2 topological term, the global anomaly, and the two-dimensional symplectic symmetry class of Anderson localization
- Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy
- Topological p-n Junction
- Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate
- Electron and Hole Injection via Charge Transfer at the Topological-Insulator /Organic-Molecule Interface
Cited by in corpus (9)
- In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator BiSbTeSe
- Shubnikov-de Haas oscillations from topological surface states of metallic BiSeTe
- Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition
- Origin and evolution of surface spin current in topological insulators
- Proximity-Induced Spin-Orbit Coupling in Graphene-BiSbTeSe Heterostructures
- Phase-coherent transport in catalyst-free vapor phase deposited BiSe crystals
- Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators
- Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators
- Vapor phase growth and characterization of van der Waals BiSbTeSe platelets on semiconducting MoS2