Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating

Abstract

A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material.

Appl. Phys. Lett. (2013)

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Cited by in corpus (6)

• Observation of inverse spin Hall effect in bismuth selenide
• Efficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface
• Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2
• Optical evidence of blue shift in topological insulator bismuth selenide in the few-layer limit
• Helicity dependent photovoltaic effect in Bi2Se3 under normal incident light
• Bi${}_2$Se${}_3$ thin films heteroepitaxially grown on $\alpha$-RuCl${}_3$