Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures

Abstract

Using atomistic quantum simulation based on a tight binding model, we investigate the formation of energy gap Eg of graphene nanomesh (GNM) lattices and the transport characteristics of GNM-based electronic devices (single potential barrier structure and p-n junction) taking into account the atomic edge disorder of holes. We find that the sensitivity of Eg to the lattice symmetry (i.e., the lattice orientation and the hole shape) is significantly suppressed in the presence of the disorder. In the case of strong disorder, the dependence of Eg on the neck width is fitted well with the scaling rule observed in experiments [Liang et al., Nano Lett. 10, 2454 (2010)]. Considering the transport characteristics of GNM-based structures, we demonstrate that the use of finite GNM sections in the devices can efficiently improve their electrical performance (i.e., high ON/OFF current ratio, good current saturation and negative differential conductance behaviors). Additionally, if the length of GNM sections is appropriately limited, the detrimental effects of disorder on transport can be avoided to a large extent. Our study provides a good explanation of the available experimental data on GNM energy gap and should be helpful for further investigations of GNM-based devices.

10 pages, 6 figures

References in corpus (17)

• The electronic properties of graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Gate-induced insulating state in bilayer graphene devices
• Graphene Antidot Lattices - Designed Defects and Spin Qubits
• Conductance quantization and transport gap in disordered graphene nanoribbons
• Simulation of Graphene Nanoribbon Field Effect Transistors
• Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
• Quasiparticle bandgap engineering of graphene and graphone on hexagonal boron nitride substrate
• Effect of edge roughness in graphene nanoribbon transistors
• Computational Study of Tunneling Transistor Based on Graphene Nanoribbon
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
• Modeling edge effects in Graphene Nanoribbon Field-effect Transistors with real and mode space methods
• On the possibility of tunable-gap bilayer graphene FET
• Quantum behavior of graphene transistors near the scaling limit
• Scaling of the energy gap in pattern-hydrogenated graphene
• Band gap engineering in graphene and hexagonal BN antidot lattices: A first principles study
• Model of tunneling transistors based on graphene on SiC

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