Low carrier concentration crystals of the topological insulator BiTeSe
arXiv:1112.1648 · doi:10.1103/PhysRevB.84.235206
Abstract
We report the characterization of BiTeSe crystals obtained by the modified Bridgman and Bridgman-Stockbarger crystal growth techniques. X-ray diffraction study confirms an ordered Se-Te distribution in the inner and outer chalcogen layers, respectively, with a small amount of mixing. The crystals displaying high resistivity () and low carrier concentration (/cm) at 4 K were found in the central region of the long Bridgman-Stockbarger crystal, which we attribute to very small differences in defect density along the length of the crystal rod. Analysis of the temperature dependent resistivities and Hall coefficients reveals the possible underlying origins of the donors and acceptors in this phase.
16 pages, 5 figures, accepted by PRB
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