Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions
arXiv:1506.06338 · doi:10.1002/adfm.201302673
Abstract
Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via Te NMR in BiTe, SbTe, BiSbTe, BiTeSe and BiTeS. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound BiTeSe is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.
24 pages, 6 figures
References in corpus (25)
- Topological Insulators
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Topological invariants of time-reversal-invariant band structures
- Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
- Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
- Stretched Exponential Relaxation Arising from a Continuous Sum of Exponential Decays
- Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
- Controlling bulk conductivity in topological insulators: Key role of anti-site defects
- Low carrier concentration crystals of the topological insulator BiTeSe
- Electronic structure and transport anisotropy of Bi2Te3 and Sb2Te3
- Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping
- Thermal Expansion Coefficients of BiSe and SbTe Crystals from 10 K to 270 K
- Spin-orbit interaction effect in the electronic structure of \BiTe \ observed by angle-resolved photoemission spectroscopy
- Scanning Tunneling Microscopy of Defect States in the Semiconductor BiSe
- Ternary Tetradymite Compounds as Topological Insulators
- Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3
- Bi2Te1.6S1.4 - a Topological Insulator in the Tetradymite Family
- NMR Probe of Metallic States in Nanoscale Topological Insulators
- Anomalous thermal expansion of SbTe topological insulator
- Nuclear magnetic resonance as a probe of electronic states of Bi2Se3
- Spin-lattice relaxation in bismuth chalcogenides
- A combined NMR and DFT study of Narrow Gap Semiconductors: The case of PbTe
- Nuclear-spin relaxation of Pb in ferroelectric powders
- Size-dependent properties of dithallium selenide
- The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3
Cited by in corpus (8)
- Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures
- Se nuclear magnetic resonance of topological insulator BiSe
- Tight-binding theory of NMR shifts in topological insulators Bi2Se3 and Bi2Te3
- Ionic and electronic properties of the topological insulator BiTeSe investigated using -detected nuclear magnetic relaxation and resonance of Li
- Topological insulator ring with magnetic impurities
- Local electronic and magnetic properties of the doped topological insulators BiSe:Ca and BiTe:Mn investigated using ion-implanted Li -NMR
- Unusual Bi NMR quadrupole effects in topological insulator BiSe
- NMR in an electric field: A bulk probe of the hidden spin and orbital polarizations