Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts

Abstract

Using high-quality Fe${}_3$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.

4 pages, 3 figures, To appear in J. Appl. Phys

References in corpus (7)

• Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface
• Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
• Electrical spin injection and transport in Germanium
• Semiconductors between spin-polarized source and drain
• Electrical spin injection and accumulation in CoFe/MgO/Ge contacts at room temperature
• Electrical spin injection and detection in Germanium using three terminal geometry
• Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

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• Intrinsic Spin Lifetime of Conduction Electrons in Germanium
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• Dynamical Spin Injection into p-type Germanium at Room Temperature
• Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
• Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium
• Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
• Pure spin current transport in a SiGe alloy
• Resonant magneto-tunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport
• Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts
• Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium
• Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon