Single-qubit-gate error below 10^-4 in a trapped ion
arXiv:1104.2552 · doi:10.1103/PhysRevA.84.030303
Abstract
With a 9Be+ trapped-ion hyperfine-states qubit, we demonstrate an error probability per randomized single-qubit gate of 2.0(2) x 10^-5, below the threshold estimate of 10^-4 commonly considered sufficient for fault-tolerant quantum computing. The 9Be+ ion is trapped above a microfabricated surface-electrode ion trap and is manipulated with microwaves applied to a trap electrode. The achievement of low single-qubit-gate errors is an essential step toward the construction of a scalable quantum computer.
5 pages, 3 figures, 1 table; changed to match published version
References in corpus (11)
- Quantum Computing
- Randomized Benchmarking of Quantum Gates
- Towards fault-tolerant quantum computing with trapped ions
- A microfabricated surface-electrode ion trap for scalable quantum information processing
- Microwave quantum logic gates for trapped ions
- Scaling and Suppression of Anomalous Quantum Decoherence in Ion Traps
- Coupled quantized mechanical oscillators
- Suppression of Heating Rates in Cryogenic Surface-Electrode Ion Traps
- Trapped-ion quantum logic gates based on oscillating magnetic fields
- Randomized benchmarking of single and multi-qubit control in liquid-state NMR quantum information processing
- Randomized benchmarking of atomic qubits in an optical lattice
Cited by in corpus (141)
- Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing
- Trapped-Ion Quantum Computing: Progress and Challenges
- A Two Qubit Logic Gate in Silicon
- Large Scale Modular Quantum Computer Architecture with Atomic Memory and Photonic Interconnects
- High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit
- A meet-in-the-middle algorithm for fast synthesis of depth-optimal quantum circuits
- High-Fidelity Universal Gate Set for Be Ion Qubits
- High-fidelity readout and control of a nuclear spin qubit in silicon
- Characterizing Quantum Gates via Randomized Benchmarking
- Efficient measurement of quantum gate error by interleaved randomized benchmarking
- Ion-trap measurements of electric-field noise near surfaces
- Demonstration of qubit operations below a rigorous fault tolerance threshold with gate set tomography
- Silicon CMOS architecture for a spin-based quantum computer
- Entangling Atomic Spins with a Strong Rydberg-Dressed Interaction
- Digital quantum simulation of fermionic models with a superconducting circuit
- Characterization of addressability by simultaneous randomized benchmarking
- Ultrafast and Fault-Tolerant Quantum Communication across Long Distances
- Blueprint for a microwave trapped-ion quantum computer
- Polynomial-time T-depth Optimization of Clifford+T circuits via Matroid Partitioning
- Experimental fault-tolerant universal quantum gates with solid-state spins under ambient conditions
- Randomized benchmarking of single qubit gates in a 2D array of neutral atom qubits
- Optimal quantum control using randomized benchmarking
- Integrated optical addressing of an ion qubit
- Process verification of two-qubit quantum gates by randomized benchmarking
- Dipolar Exchange Quantum Logic Gate with Polar Molecules
- Randomized Benchmarking with Confidence
- Universal gates based on targeted phase shifts in a 3D neutral atom array
- Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
- Robust two-qubit gates in a linear ion crystal using a frequency-modulated driving force
- Towards simulating 2D effects in lattice gauge theories on a quantum computer
- Investigating the limits of randomized benchmarking protocols
- Comparing Experiments to the Fault-Tolerance Threshold
- Randomized Benchmarking of Multi-Qubit Gates
- No -epistemic model can fully explain the indistinguishability of quantum states
- Coherent addressing of individual neutral atoms in a 3D optical lattice
- Bounding quantum gate error rate based on reported average fidelity
- Fidelity of a Rydberg blockade quantum gate from simulated quantum process tomography
- Qubit metrology of ultralow phase noise using randomized benchmarking
- State-independent experimental tests of quantum contextuality in a three dimensional system
- A trapped-ion based quantum byte with next-neighbour cross-talk
- Efficient unitary designs with nearly time-independent Hamiltonian dynamics
- High Fidelity Single-qubit Gates of a Single Neutral Atom in the Magic-Intensity Optical Dipole Trap
- The effect of noise correlations on randomized benchmarking
- Cryogenic setup for trapped ion quantum computing
- Simulating the performance of a distance-3 surface code in a linear ion trap
- Heisenberg-Scaling Measurement Protocol for Analytic Functions with Quantum Sensor Networks
- Dispersive optical systems for scalable Raman driving of hyperfine qubits
- Individual-Ion Addressing with Microwave Field Gradients
- Characterization of Leakage Errors via Randomized Benchmarking
- Optimization of a solid-state electron spin qubit using Gate Set Tomography
- Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser
- Ion traps fabricated in a CMOS foundry
- Solovay-Kitaev Decomposition Strategy for Single-Qubit Channels
- Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses
- Proof of finite surface code threshold for matching
- Computer-automated tuning procedures for semiconductor quantum dot arrays
- Trapped-ion spin-motion coupling with microwaves and a near-motional oscillating magnetic field gradient
- Real Randomized Benchmarking
- Transversality and lattice surgery: exploring realistic routes towards coupled logical qubits with trapped-ion quantum processors
- Error per single-qubit gate below in a superconducting qubit
- Loading of a surface-electrode ion trap from a remote, precooled source
- Microwave Near-Field Quantum Control of Trapped Ions
- Accelerated Randomized Benchmarking
- Engineering Large Stark Shifts for Control of Individual Clock State Qubits
- A microfabricated ion trap with integrated microwave circuitry
- Entangling an arbitrary pair of qubits in a long ion crystal
- Spatially uniform single-qubit gate operations with near-field microwaves and composite pulse compensation
- Versatile microwave-driven trapped ion spin system for quantum information processing
- Randomized Benchmarking with Restricted Gate Sets
- Tutorial: The trapped-ion qubit toolbox
- Unitary -designs from random - and -diagonal unitaries
- Fast, high-fidelity addressed single-qubit gates using efficient composite pulse sequences
- Experimental demonstration of cheap and accurate phase estimation
- Batch Optimization of Frequency-Modulated Pulses for Robust Two-qubit Gates in Ion Chains
- Scalable ion-photon quantum interface based on integrated diffractive mirrors
- High-Fidelity Preservation of Quantum Information During Trapped-Ion Transport
- Integrated Be multi-qubit gate device for the ion-trap quantum computer
- Multiqubit and multilevel quantum reinforcement learning with quantum technologies
- Driven Geometric Phase Gates with Trapped Ions
- Comparing Zeeman qubits to hyperfine qubits in the context of the surface code: Yb and Yb
- Single qubit manipulation in a microfabricated surface electrode ion trap
- Approximate Randomized Benchmarking for Finite Groups
- Leakage mitigation for quantum error correction using a mixed qubit scheme
- High-fidelity spatial and polarization addressing of Ca-43 qubits using near-field microwave control
- A polynomial time and space heuristic algorithm for T-count
- Single-qubit universal classifier implemented on an ion-trap quantum device
- Asynchronous Quantum Repeater using Multiple Quantum Memory
- Segmented ion-trap fabrication using high precision stacked wafers
- State selective detection of hyperfine qubits
- Optical Barium Ion Qubit
- Analytic asymptotic performance of topological codes
- Hierarchical surface code for network quantum computing with modules of arbitrary size
- Microwave control electrodes for scalable, parallel, single-qubit operations in a surface-electrode ion trap
- High-fidelity indirect readout of trapped-ion hyperfine qubits
- Trapped Ion Quantum Computing using Optical Tweezers and Electric Fields
- Quantum dynamics of trapped ions in a dynamic field gradient using dressed states
- Quantum Model Averaging
- Ground-state cooling of a trapped ion using long-wavelength radiation
- A Novel, Robust Quantum Detection Scheme
- Technologies for trapped-ion quantum information systems
- Randomized Benchmarking under Different Gatesets
- Fast control of semiconductor qubits beyond the rotating-wave approximation
- A Study on Fast Gates for Large-Scale Quantum Simulation with Trapped Ions
- Study of Decoherence in Quantum Computers: A Circuit-Design Perspective
- Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry
- A (quasi-)polynomial time heuristic algorithm for synthesizing T-depth optimal circuits
- Universal Control of Ion Qubits in a Scalable Microfabricated Planar Trap
- Entanglement between a trapped ion qubit and a 780-nm photon via quantum frequency conversion
- Thick-film technology for ultra high vacuum interfaces of micro-structured traps
- Æ codes
- Randomized benchmarking of quantum gates implemented by electron spin resonance
- VECSEL systems for quantum information processing with trapped beryllium ions
- Robust Two-Qubit Gates Using Pulsed Dynamical Decoupling
- Laserless quantum gates for electric dipoles in thermal motion
- Numerical optimization of amplitude-modulated pulses in microwave-driven entanglement generation
- Electromagnetically-Induced-Transparency Cooling of High-Nuclear-Spin Ions
- Angle-robust Two-Qubit Gates in a Linear Ion Crystal
- Direct digital synthesis of microwave waveforms for quantum computing
- Coherent Control of Trapped Ion Qubits with Localized Electric Fields
- Certified quantum gates
- Randomized Benchmarking of Clifford Operators
- Dipole-phonon quantum logic with alkaline-earth monoxide and monosulfide cations
- Indirect Cooling of Weakly Coupled Trapped-Ion Mechanical Oscillators
- The Effect of Micromotion and Local Stress in Quantum simulation with Trapped Ions in Optical Tweezers
- Low-temperature environments for quantum computation and quantum simulation
- Rapid laser-free ion cooling by controlled collision
- Single-ion addressing via trap potential modulation in global optical fields
- Reconfigurable quantum logic gates using Rashba controlled spin polarized currents
- A many-body singlet prepared by a central spin qubit
- Hybrid setup for stable magnetic fields enabling robust quantum control
- Subpicosecond rotations of atomic clock states
- Many-Body Physics with Trapped Ions
- Quantum Gates Robust to Secular Amplitude Drifts
- Experimental realization of direct entangling gates between dual-type qubits
- Quantum sensing of weak electric and magnetic fields by coherent amplification of energy level shift effects
- Integrated-Photonics-Based Systems for Polarization-Gradient Cooling of Trapped Ions
- The role of master clock stability in scalable quantum information processing
- Quantum computation with noisy operations
- Phase Stabilization of a Frequency Comb using Multipulse Quantum Interferometry
- Hardware-efficient quantum annealing with error mitigation via classical shadow
- The Virtual Quantum Device (VQD): A tool for detailed emulation of quantum computers