Loading of a surface-electrode ion trap from a remote, precooled source

Abstract

We demonstrate loading of ions into a surface-electrode trap (SET) from a remote, laser-cooled source of neutral atoms. We first cool and load $\sim$ $10^6$ neutral ${}^{88}$Sr atoms into a magneto-optical trap from an oven that has no line of sight with the SET. The cold atoms are then pushed with a resonant laser into the trap region where they are subsequently photoionized and trapped in an SET operated at a cryogenic temperature of 4.6 K. We present studies of the loading process and show that our technique achieves ion loading into a shallow (15 meV depth) trap at rates as high as 125 ions/s while drastically reducing the amount of metal deposition on the trap surface as compared with direct loading from a hot vapor. Furthermore, we note that due to multiple stages of isotopic filtering in our loading process, this technique has the potential for enhanced isotopic selectivity over other loading methods. Rapid loading from a clean, isotopically pure, and precooled source may enable scalable quantum information processing with trapped ions in large, low-depth surface trap arrays that are not amenable to loading from a hot atomic beam.

References in corpus (7)

• Fault-tolerant quantum computation with high threshold in two dimensions
• Towards fault-tolerant quantum computing with trapped ions
• A microfabricated surface-electrode ion trap for scalable quantum information processing
• Suppression of Heating Rates in Cryogenic Surface-Electrode Ion Traps
• Temperature Dependence of Electric Field Noise Above Gold Surfaces
• Bright Source of Cold Ions for Surface-Electrode Traps
• Laser-induced charging of microfabricated ion traps

Cited by in corpus (29)

• Trapped-Ion Quantum Computing: Progress and Challenges
• Ion-trap measurements of electric-field noise near surfaces
• Integrated multi-wavelength control of an ion qubit
• Integrated optical addressing of an ion qubit
• Cryogenic Trapped-Ion System for Large Scale Quantum Simulation
• Ion traps fabricated in a CMOS foundry
• Chip-integrated voltage sources for control of trapped ions
• Measurement of Ion Motional Heating Rates over a Range of Trap Frequencies and Temperatures
• Microscopy with a Deterministic Single Ion Source
• Closed-cycle, low-vibration 4 K cryostat for ion traps and other applications
• Scalable Loading of a Two-Dimensional Trapped-Ion Array
• Hybrid quantum systems with trapped charged particles
• Evidence for multiple mechanisms underlying surface electric-field noise in ion traps
• Reduction of trapped ion anomalous heating by in situ surface plasma cleaning
• Modular cryostat for ion trapping with surface-electrode ion traps
• Technologies for trapped-ion quantum information systems
• Laser ablation production of Ba, Ca, Dy, Er, La, Lu, and Yb ions
• Method for Determination of Technical Noise Contributions to Ion Motional Heating
• Experimental quantum channel discrimination using metastable states of a trapped ion
• A short response-time atomic source for trapped ion experiments
• High-Fidelity Transport of Trapped-Ion Qubits in a Multi-Layer Array
• Optimal electrode geometries for 2-dimensional ion arrays with bi-layer ion traps
• Ablation loading of barium ions into a surface electrode trap
• Heisenberg scaling of imaging resolution by coherent enhancement
• Test and characterization of multilayer ion traps on fused silica
• Integrated-Photonics-Based Systems for Polarization-Gradient Cooling of Trapped Ions
• Deterministic preparation of a dual-species two-ion crystal
• Insensitivity of Ion Motional Heating Rate to Trap Material over a Large Temperature Range
• An optically-heated atomic source for compact ion trap vacuum systems