Measurement of Ion Motional Heating Rates over a Range of Trap Frequencies and Temperatures
arXiv:1412.5119 · doi:10.1103/PhysRevA.91.041402
Abstract
We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between 0.6 and 1.5 MHz and 4 and 295 K. Additionally, we examine the possible effect of adsorbed surface contaminants with boiling points below 105C by measuring the ion heating rate before and after locally baking our ion trap chip under ultrahigh vacuum conditions. We compare the heating rates presented here to those calculated from available electric-field noise models. We can tightly constrain a subset of these models based on their expected frequency and temperature scaling interdependence. Discrepancies between the measured results and predicted values point to the need for refinement of theoretical noise models in order to more fully understand the mechanisms behind motional trapped-ion heating.
6 pages, 3 figures, 2 tables
References in corpus (5)
- Scaling and Suppression of Anomalous Quantum Decoherence in Ion Traps
- Suppression of Heating Rates in Cryogenic Surface-Electrode Ion Traps
- Temperature Dependence of Electric Field Noise Above Gold Surfaces
- Randomized Benchmarking of Multi-Qubit Gates
- Saturation of Two Level Systems and Charge Noise in Josephson Junction Qubits
Cited by in corpus (19)
- Integrated multi-wavelength control of an ion qubit
- Measurements of trapped-ion heating rates with exchangeable surfaces in close proximity
- Measurement of ultra-low heating rates of a single antiproton in a cryogenic Penning trap
- Hybrid Oscillator-Qubit Quantum Processors: Instruction Set Architectures, Abstract Machine Models, and Applications
- Coherent rotations of qubits within a multi-species ion-trap quantum computer
- Spatially resolved surface dissipation over metal and dielectric substrates
- Spin readout of trapped electron qubits
- Coherence properties of highly-excited motional states of a trapped ion
- Measurement of electric-field noise from interchangeable samples with a trapped-ion sensor
- Low-temperature environments for quantum computation and quantum simulation
- Simulating open-system molecular dynamics on analog quantum computers
- Entangling-gate error from coherently displaced motional modes of trapped ions
- Electric field noise in a high-temperature superconducting surface ion trap
- Fast mixed-species quantum logic gates for trapped-ion quantum networks
- Test and characterization of multilayer ion traps on fused silica
- A simplified Mølmer-Sørensen gate for the trapped ion quantum computer
- High-speed and high-connectivity two-qubit gates in long chains of trapped ions
- Error-Resilient Fast Entangling Gates for Scalable Ion-Trap Quantum Processors
- Surface science motivated by heating of trapped ions from the quantum ground state