Integrated ${}^9$Be${}^{+}$ multi-qubit gate device for the ion-trap quantum computer

Abstract

We demonstrate the experimental realization of a two-qubit Mølmer-Sørensen gate on a magnetic field-insensitive hyperfine transition in ${}^9$Be${}^{+}$ ions using microwave-near fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be $98.2\pm 1.2\%$ and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.

arXiv comment4 figures, 1 table

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Cited by in corpus (15)

• High-fidelity laser-free universal control of two trapped ion qubits
• Robust and resource-efficient microwave near-field entangling ${}^9$Be${}^{+}$ gate
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• Laser-free trapped-ion entangling gates with simultaneous insensitivity to qubit and motional decoherence
• Feasibility study of quantum computing using trapped electrons
• Robust and fast microwave-driven quantum logic for trapped-ion qubits
• Numerical optimization of amplitude-modulated pulses in microwave-driven entanglement generation
• Entangling gates for trapped-ion quantum computation and quantum simulation
• Hybrid Microwave Radiation Patterns for High-Fidelity Quantum Gates with Trapped Ions
• Phase-adaptive dynamical decoupling methods for robust spin-spin dynamics in trapped ions
• Analogue quantum simulation of superradiance and subradiance in trapped-ions
• Individually-addressed quantum gate interactions using dynamical decoupling
• Superconducting surface trap chips for microwave-driven trapped ions
• Parity Cross-Resonance: A Multiqubit Gate