Single-ion microwave near-field quantum sensor
arXiv:1601.06460 · doi:10.1063/1.4974736
Abstract
We develop an intuitive model of 2D microwave near-fields in the unusual regime of centimeter waves localized to tens of microns. Close to an intensity minimum, a simple effective description emerges with five parameters which characterize the strength and spatial orientation of the zero and first order terms of the near-field, as well as the field polarization. Such a field configuration is realized in a microfabricated planar structure with an integrated microwave conductor operating near 1 GHz. We use a single 9Be+ ion as a high-resolution quantum sensor to measure the field distribution through energy shifts in its hyperfine structure. We find agreement with simulations at the sub-micron and few-degree level. Our findings give a clear and general picture of the basic properties of oscillatory 2D near-fields with applications in quantum information processing, neutral atom trapping and manipulation, chip-scale atomic clocks, and integrated microwave circuits.
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- Radio-frequency sideband cooling and sympathetic cooling of trapped ions in a static magnetic field gradient
- Versatile control of Be ions using a spectrally tailored UV frequency comb
- Precise, super-resolving intensity measurement by quantum jump spectroscopy of a single neutral atom