Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic

Abstract

We report the design, fabrication, and characterization of a cryogenic ion trap system for the implementation of quantum logic driven by near-field microwaves. The trap incorporates an on-chip microwave resonator with an electrode geometry designed to null the microwave field component that couples directly to the qubit, while giving a large field gradient for driving entangling logic gates. We map the microwave field using a single ${}^{43}$Ca${}^{+}$ ion, and measure the ion trapping lifetime and motional mode heating rates for one and two ions.

18 pages, 13 figures

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Cited by in corpus (8)

• Single-qubit gates with errors at the $10^{-7}$ level
• Robust and fast microwave-driven quantum logic for trapped-ion qubits
• A Comparison of Calcium Sources for Ion-Trap Loading via Laser Ablation
• Measurement-Induced Heating of Trapped Ions
• Individually-addressed quantum gate interactions using dynamical decoupling
• In-situ characterization of qubit drive-phase distortions
• Superconducting surface trap chips for microwave-driven trapped ions
• Polarisation-insensitive state preparation for trapped-ion hyperfine qubits