Individually-addressed quantum gate interactions using dynamical decoupling

Abstract

A leading approach to implementing small-scale quantum computers has been to use laser beams, focused to micron spot sizes, to address and entangle trapped ions in a linear crystal. Here we propose a method to implement individually-addressed entangling gate interactions, but driven by microwave fields, with a spatial-resolution of a few microns, corresponding to $10^{-5}$ microwave wavelengths. We experimentally demonstrate the ability to suppress the effect of the state-dependent force using a single ion, and find the required interaction introduces $3.7(4)\times 10^{-4}$ error per emulated gate in a single-qubit benchmarking sequence. We model the scheme for a 17-qubit ion crystal, and find that any pair of ions should be addressable with an average crosstalk error of $\sim 10^{-5}$.

References in corpus (43)

• Dynamical Decoupling of Open Quantum Systems
• Dynamical suppression of decoherence in two-state quantum systems
• Quantum computation with ions in thermal motion
• Randomized Benchmarking of Quantum Gates
• Entanglement and quantum computation with ions in thermal motion
• Large Scale Modular Quantum Computer Architecture with Atomic Memory and Photonic Interconnects
• Optimized Dynamical Decoupling in a Model Quantum Memory
• High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit
• Ion-trap measurements of electric-field noise near surfaces
• High-fidelity readout of trapped-ion qubits
• Microwave quantum logic gates for trapped ions
• Trapped-ion quantum logic gates based on oscillating magnetic fields
• Optimal quantum control of multi-mode couplings between trapped ion qubits for scalable entanglement
• High-fidelity laser-free universal control of two trapped ion qubits
• Suppression of crosstalk in superconducting qubits using dynamical decoupling
• Dynamical decoupling for superconducting qubits: a performance survey
• High-fidelity trapped-ion quantum logic using near-field microwaves
• Comparison of dynamical decoupling protocols for a nitrogen-vacancy center in diamond
• Trapped-ion quantum logic with global radiation fields
• Designer Spin Pseudomolecule Implemented with Trapped Ions in a Magnetic Gradient
• Arbitrary-speed quantum gates within large ion crystals through minimum control of laser beams
• Coherent Error Suppression in Multi-Qubit Entangling Gates
• Robust and resource-efficient microwave near-field entangling ${}^9$Be${}^{+}$ gate
• Experimental inhibition of decoherence on flying qubits via bang-bang control
• Two-qubit entangling gates within arbitrarily long chains of trapped ions
• A trapped-ion based quantum byte with $10^{-5}$ next-neighbour cross-talk
• Demonstration of a dressed-state phase gate for trapped ions
• Efficient preparation and detection of microwave dressed-state qubits and qutrits with trapped ions
• Individual-Ion Addressing with Microwave Field Gradients
• Optimized, Unequal Pulse Spacing in Multiple Echo Sequences Improves Refocusing
• Microwave Near-Field Quantum Control of Trapped Ions
• Fast dynamical decoupling of the Molmer-Sorensen entangling gate
• Fast, high-fidelity addressed single-qubit gates using efficient composite pulse sequences
• Controlling long ion strings for quantum simulation and precision measurements
• Integrated ${}^9$Be${}^{+}$ multi-qubit gate device for the ion-trap quantum computer
• Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits
• High-fidelity spatial and polarization addressing of Ca-43 qubits using near-field microwave control
• Microwave control electrodes for scalable, parallel, single-qubit operations in a surface-electrode ion trap
• Multilayer ion trap with three-dimensional microwave circuitry for scalable quantum logic applications
• Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic
• Robust Two-Qubit Gates Using Pulsed Dynamical Decoupling
• Coherent Control of Trapped Ion Qubits with Localized Electric Fields
• Individual addressing of trapped ion qubits with geometric phase gates

Cited by in corpus (1)

• Single-qubit gates with errors at the $10^{-7}$ level