Individual addressing of trapped ion qubits with geometric phase gates

Abstract

We propose a new scheme for individual addressing of trapped ion qubits, selecting them via their motional frequency. We show that geometric phase gates can perform single-qubit rotations using the coherent interference of spin-independent and (global) spin-dependent forces. The spin-independent forces, which can be generated via localised electric fields, increase the gate speed while reducing its sensitivity to motional decoherence, which we show analytically and numerically. While the scheme applies to most trapped ion experimental setups, we numerically simulate a specific laser-free implementation, showing cross-talk errors below $10^{-6}$ for reasonable parameters.

References in corpus (15)

• Quantum Computing
• Quantum computing with trapped ions
• High-fidelity preparation, gates, memory and readout of a trapped-ion quantum bit
• Complete methods set for scalable ion trap quantum information processing
• Trapped-ion quantum logic gates based on oscillating magnetic fields
• High-fidelity laser-free universal control of two trapped ion qubits
• Errors in trapped-ion quantum gates due to spontaneous photon scattering
• High-Fidelity Bell-State Preparation with ${}^{40}$Ca${}^{+}$ Optical Qubits
• High-fidelity trapped-ion quantum logic using near-field microwaves
• Ion trap quantum gates with amplitude-modulated laser beams
• Individual addressing of trapped ions and coupling of motional and spin states using rf radiation
• Robust and resource-efficient microwave near-field entangling ${}^9$Be${}^{+}$ gate
• Microwave Near-Field Quantum Control of Trapped Ions
• Theory of Cross Phase Modulation for the Vibrational Modes of Trapped Ions
• One- and two-qubit gate infidelities due to motional errors in trapped ions and electrons

Cited by in corpus (5)

• Fast, high-fidelity addressed single-qubit gates using efficient composite pulse sequences
• Scalable, high-fidelity all-electronic control of trapped-ion qubits
• Coherent Control of Trapped Ion Qubits with Localized Electric Fields
• Individual Addressing and State Readout of Trapped Ions Utilizing Radio-Frequency Micromotion
• Individually-addressed quantum gate interactions using dynamical decoupling