Individual addressing of ions using magnetic field gradients in a surface-electrode ion trap
arXiv:0811.2422 · doi:10.1063/1.3095520
Abstract
Dense array of ions in microfabricated traps represent one possible way to scale up ion trap quantum computing. The ability to address individual ions is an important component of such a scheme. We demonstrate individual addressing of trapped ions in a microfabricated surface-electrode trap using a magnetic field gradient generated on-chip. A frequency splitting of 310(2) kHz for two ions separated by 5 um is achieved. Selective single qubit operations are performed on one of two trapped ions with an average of 2.2+/-1.0% crosstalk. Coherence time as measured by the spin-echo technique is unaffected by the field gradient.
3 pages, 3 figures; submitted to APL
References in corpus (6)
- Suppression of Heating Rates in Cryogenic Surface-Electrode Ion Traps
- Temperature Dependence of Electric Field Noise Above Gold Surfaces
- Individual addressing of trapped ions and coupling of motional and spin states using rf radiation
- Electrodynamically trapped Yb+ ions for quantum information processing
- Transport quantum logic gates for trapped ions
- Universal quantum computation in decoherence-free subspaces with hot trapped-ions
Cited by in corpus (36)
- Microwave quantum logic gates for trapped ions
- Quantum Gates and Memory using Microwave Dressed States
- Designer Spin Pseudomolecule Implemented with Trapped Ions in a Magnetic Gradient
- Digital-Analog Quantum Computation
- Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features
- A trapped-ion based quantum byte with next-neighbour cross-talk
- Microfabricated Ion Traps
- Individual-Ion Addressing with Microwave Field Gradients
- Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser
- Independent individual addressing of multiple neutral atom qubits with a MEMS beam steering system
- A bosonic Josephson junction controlled by a single trapped ion
- UV-sensitive superconducting nanowire single photon detectors for integration in an ion trap
- Superconducting microfabricated ion traps
- Spatially uniform single-qubit gate operations with near-field microwaves and composite pulse compensation
- Designing spin-spin interactions with one and two dimensional ion crystals in planar micro traps
- Quantum dynamics of an atomic double-well system interacting with a trapped ion
- Transformed Composite Sequences for Improved Qubit Addressing
- Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap
- Microwave control electrodes for scalable, parallel, single-qubit operations in a surface-electrode ion trap
- Addressing Two-Level Systems Variably Coupled to an Oscillating Field
- Fabrication of a planar micro Penning trap and numerical investigations of versatile ion positioning protocols
- A planar ion trap chip with integrated structures for an adjustable magnetic field gradient
- Spin and motion dynamics with zigzag ion crystals in transverse magnetic field gradients
- Laserless quantum gates for electric dipoles in thermal motion
- Operation of a Microfabricated Planar Ion-Trap for Studies of a Yb-Rb Hybrid Quantum System
- Entangling gates for trapped-ion quantum computation and quantum simulation
- Fabrication of Surface Ion Traps with Integrated Current Carrying Wires enabling High Magnetic Field Gradients
- Single-ion addressing via trap potential modulation in global optical fields
- Individual addressing of trapped ion qubits with geometric phase gates
- Individual Addressing and State Readout of Trapped Ions Utilizing Radio-Frequency Micromotion
- Heisenberg-Limited Spin-Mechanical Gravimetry
- Selective Noise Resistant Gate
- Switchable Magnetic Bottles and Field Gradients for Particle Traps
- Quantum gates using electronic and nuclear spins of Yb in a magnetic field gradient
- Crosstalk Insensitive Trapped-Ion Entanglement through Coupling Matrix Engineering
- Schrödinger cat states of a macroscopic charged particle co-trapped with an ion