Single-ion addressing via trap potential modulation in global optical fields

Abstract

To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of ${}^{40}$Ca${}^{+}$ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.

27 pages, 3 figures

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• Scalable, high-fidelity all-electronic control of trapped-ion qubits
• Bilayer crystals of trapped ions for quantum information processing
• Individual Addressing and State Readout of Trapped Ions Utilizing Radio-Frequency Micromotion
• Quantum process tomography of a Mølmer-Sørensen gate via a global beam