Modulating carrier and sideband coupling strengths in a standing wave gate beam

Abstract

We control the relative coupling strength of carrier and first order motional sideband interactions of a trapped ion by placing it in a resonant optical standing wave. Our configuration uses the surface of a microfabricated chip trap as a mirror, avoiding technical challenges of in-vacuum optical cavities. Displacing the ion along the standing wave, we show a periodic suppression of the carrier and sideband transitions with the cycles for the two cases $180^{\circ }$ out of phase with each other. This technique allows for suppression of off-resonant carrier excitations when addressing the motional sidebands, with applications in quantum simulation and quantum control. Using the standing wave fringes, we measure the relative ion height as a function of applied electric field, allowing for a precise measurement of ion displacement and, combined with measured micromotion amplitudes, a validation of trap numerical models.

5 pages, 4 figures

References in corpus (9)

• Quantum simulation of cosmic inflation in two-component Bose-Einstein condensates
• Trapped-ion probing of light-induced charging effects on dielectrics
• A single ion coupled to an optical fiber cavity
• Digital Quantum Rabi and Dicke Models in Superconducting Circuits
• Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation
• Heating and ion transport in a Y-junction surface-electrode trap
• Ball-grid array architecture for microfabricated ion traps
• Efficient sympathetic motional ground-state cooling of a molecular ion
• Sympathetic cooling of molecular ion motion to the ground state

Cited by in corpus (9)

• Probing the Dynamics of Superradiant Quantum Phase Transition in a Single Trapped-Ion
• Control of an atomic quadrupole transition in a phase-stable standing wave
• Phase-stable free-space optical lattices for trapped ions
• Breaking the entangling gate speed limit for trapped-ion qubits using a phase-stable standing wave
• An Integrated Mirror and Surface Ion Trap with a Tunable Trap Location
• Fast multi-qubit global-entangling gates without individual addressing of trapped ions
• Single-ion addressing via trap potential modulation in global optical fields
• Magnetic field fluctuations analysis for the ion trap implementation of the quantum Rabi model in the the deep strong coupling regime
• Trapped-ion laser cooling in structured light fields