An Integrated Mirror and Surface Ion Trap with a Tunable Trap Location

Abstract

We report a demonstration of a surface ion trap fabricated directly on a highly reflective mirror surface, which includes a secondary set of radio frequency (RF) electrodes allowing for translation of the quadrupole RF null location. We introduce a position-dependent photon scattering rate for a ${}^{174}$Yb${}^{+}$ ion in the direction perpendicular to the trap surface using a standing wave of retroreflected light off the mirror surface directly below the trap. Using this setup, we demonstrate the capability of fine-tuning the RF trap location with nanometer scale precision and characterize the charging effects of the dielectric mirror surface upon exposure to ultra-violet light.

arXiv comment5 pages, 4 figures

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• Fluorescence Detection of a Trapped Ion with a Monolithically Integrated Single-Photon-Counting Avalanche Diode
• High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes
• Segmented ion-trap fabrication using high precision stacked wafers
• Probing surface charge densities on optical fibers with a trapped ion
• Cooperative engineering the multiple radio-frequency fields to reduce the X-junction barrier for ion trap chips
• Compatibility of trapped ions and dielectrics at cryogenic temperatures
• Vertical ion transport in a surface Paul trap: escalator and elevator approaches