High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Abstract

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped ${}^{88}{\text{Sr}}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $\mu$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

arXiv comment7 pages, 5 figures

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