High-Fidelity Ion State Detection Using Trap-Integrated Avalanche Photodiodes

Abstract

Integrated technologies greatly enhance the prospects for practical quantum information processing and sensing devices based on trapped ions. High-speed and high-fidelity ion state readout is critical for any such application. Integrated detectors offer significant advantages for system portability and can also greatly facilitate parallel operations if a separate detector can be incorporated at each ion-trapping location. Here we demonstrate ion quantum state detection at room temperature utilizing single-photon avalanche diodes (SPADs) integrated directly into the substrate of silicon ion trapping chips. We detect the state of a trapped ${}^{88}{\text{Sr}}^{+}$ ion via fluorescence collection with the SPAD, achieving $99.92(1)\%$ average fidelity in 450 $\mu$s, opening the door to the application of integrated state detection to quantum computing and sensing utilizing arrays of trapped ions.

7 pages, 5 figures

References in corpus (10)

• Quantum computing with trapped ions
• An ${}^{27}$Al${}^{+}$ quantum-logic clock with systematic uncertainty below $10^{-18}$
• State Readout of a Trapped Ion Qubit Using a Trap-Integrated Superconducting Photon Detector
• Imaging trapped ions with a microfabricated lens for quantum information processing
• Efficient Fiber Optic Detection of Trapped Ion Fluorescence
• Integrated optical addressing of a trapped ytterbium ion
• Transparent ion trap with integrated photodetector
• Fluorescence Detection of a Trapped Ion with a Monolithically Integrated Single-Photon-Counting Avalanche Diode
• Scalable ion-photon quantum interface based on integrated diffractive mirrors
• An Integrated Mirror and Surface Ion Trap with a Tunable Trap Location

Cited by in corpus (15)

• Noisy intermediate-scale quantum computers
• How to wire a 1000-qubit trapped ion quantum computer
• Multi-site Integrated Optical Addressing of Trapped Ions
• High-fidelity trapped-ion qubit operations with scalable photonic modulators
• Multi-zone trapped-ion qubit control in an integrated photonics QCCD device
• Integrated photonic structures for photon-mediated entanglement of trapped ions
• Trap-Integrated Superconducting Nanowire Single-Photon Detectors with Improved RF Tolerance for Trapped-Ion Qubit State Readout
• Ion Trap with In-Vacuum High Numerical Aperture Imaging for a Dual-Species Modular Quantum Computer
• Single-photon detectors on arbitrary photonic substrates
• Ablation loading of barium ions into a surface electrode trap
• Atomic fluorescence collection into planar photonic devices
• Test and characterization of multilayer ion traps on fused silica
• Trap-integrated fluorescence detection based on silicon photomultipliers in a cryogenic Penning trap
• Fault Localization in a Microfabricated Surface Ion Trap using Diamond Nitrogen-Vacancy Center Magnetometry
• Scalable chip-based 3D ion traps