Fault Localization in a Microfabricated Surface Ion Trap using Diamond Nitrogen-Vacancy Center Magnetometry
arXiv:2403.08731 · doi:10.1063/5.0234269
Abstract
As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred with likely integrated-photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy (NV) centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared to intentionally-created faults, finding that the root-cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.
8 pages main text; 2 pages supplement
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