Multilayer ion trap with three-dimensional microwave circuitry for scalable quantum logic applications

Abstract

We present a multilayer surface-electrode ion trap with embedded 3D microwave circuitry for implementing entangling quantum logic gates. We discuss the electromagnetic full-wave simulation procedure that has led to the trap design and the characterization of the resulting microwave field-pattern using a single ion as a local field probe. The results agree with simulations within the uncertainty; compared to previous traps, this design reduces detrimental AC Zeeman shifts by three orders of magnitude. The design presented here can be viewed as an entangling gate component in a library for surface-electrode ion traps intended for quantum logic operations.

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Cited by in corpus (9)

• Robust and resource-efficient microwave near-field entangling ${}^9$Be${}^{+}$ gate
• Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features
• Fast, high-fidelity addressed single-qubit gates using efficient composite pulse sequences
• Integrated ${}^9$Be${}^{+}$ multi-qubit gate device for the ion-trap quantum computer
• Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic
• Numerical optimization of amplitude-modulated pulses in microwave-driven entanglement generation
• Fabrication of Surface Ion Traps with Integrated Current Carrying Wires enabling High Magnetic Field Gradients
• Individually-addressed quantum gate interactions using dynamical decoupling
• Superconducting surface trap chips for microwave-driven trapped ions