Multilayer ion trap technology for scalable quantum computing and quantum simulation

Abstract

We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled ${}^9$Be${}^{+}$ ion held at a distance of 35$\mu$m above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.

11 pages, 4 figures

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Cited by in corpus (15)

• Quantum computers as universal quantum simulators: state-of-art and perspectives
• Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features
• Integrated ${}^9$Be${}^{+}$ multi-qubit gate device for the ion-trap quantum computer
• Ultra-low vibration closed-cycle cryogenic surface-electrode ion trap apparatus
• Penning micro-trap for quantum computing
• TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing
• Multilayer ion trap with three-dimensional microwave circuitry for scalable quantum logic applications
• Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic
• A room-temperature ion trapping apparatus with hydrogen partial pressure below $10^{-11}$ mBar
• In situ detection of RF breakdown on microfabricated surface ion traps
• Efficient fault-tolerant code switching via one-way transversal CNOT gates
• Electric field noise in a high-temperature superconducting surface ion trap
• Test and characterization of multilayer ion traps on fused silica
• Multi-junction surface ion trap for quantum computing
• Preliminary characterization of a surface electrode Paul trap for frequency metrology