Photon scattering errors during stimulated Raman transitions in trapped-ion qubits

Abstract

We study photon scattering errors in stimulated Raman driven quantum logic gates. For certain parameter regimes, we find that previous, simplified models of the process significantly overestimate the gate error rate due to photon scattering. This overestimate is shown to be due to previous models neglecting the detuning dependence of the scattered photon frequency and Lamb-Dicke parameter, a second scattering process, interference effects on scattering rates to metastable manifolds, and the counter-rotating contribution to the Raman transition rate. The resulting improved model shows that there is no fundamental limit on gate error due to photon scattering for electronic ground state qubits in commonly-used trapped-ion species when the Raman laser beams are red detuned from the main optical transition. Additionally, photon scattering errors are studied for qubits encoded in metastable $D_{5/2}$ manifold, showing that gate errors below $10^{-4}$ are achievable for all commonly-used trapped ions.

24 pages, 8 figures, to be submitted to Phys. Rev. A. In this version, we changed the two-qubit gate under consideration. Originally, we considered a gate driven by two perpendicular pairs of Raman beams. In this version, we consider a gate driven by a pair of Raman beams counterpropagating against a third Raman beam

References in corpus (3)

• Errors in trapped-ion quantum gates due to spontaneous photon scattering
• $\text{omg}$ Blueprint for trapped ion quantum computing with metastable states
• A Wavelength-Insensitive, Multispecies Entangling Gate for Group-2 Atomic Ions

Cited by in corpus (17)

• Quantum Error Correction with Metastable States of Trapped Ions Using Erasure Conversion
• Seeking a quantum advantage with trapped-ion quantum simulations of condensed-phase chemical dynamics
• Scalable, high-fidelity all-electronic control of trapped-ion qubits
• Robust and fast microwave-driven quantum logic for trapped-ion qubits
• Cryogenic ion trap system for high-fidelity near-field microwave-driven quantum logic
• Errors in stimulated-Raman-induced logic gates in ${}^{133}$Ba${}^{+}$
• Realization of programmable Ising models in a trapped-ion quantum simulator
• Eliminating qubit type cross-talk in the $\text{omg}$ protocol
• Comparison of Spontaneous Emission in Trapped Ion Multiqubit Gates at High Magnetic Fields
• Engineering of a Low-Entropy Quantum Simulator for Strongly Correlated Electrons Using SU($\mathcal{N}$)-Symmetric Cold Atom Mixtures
• Randomized Benchmarking with Leakage Errors
• Quantum logic control of a transition metal ion
• Spontaneous Raman scattering out of a metastable atomic qubit
• Quantum-Classical Auxiliary Field Quantum Monte Carlo with Matchgate Shadows on Trapped Ion Quantum Computers
• Non-invasive mid-circuit measurement and reset on atomic qubits
• Parametric Amplification of Spin-Motion Coupling in Three-Dimensional Trapped-Ion Crystals
• Compact Continuous Cold Atomic Beam from a Single Cell with 3D Cooling and Ultra-low Light Shift