Errors in stimulated-Raman-induced logic gates in Ba
arXiv:2212.02608 · doi:10.1103/PhysRevLett.131.063001
Abstract
is illuminated by a laser that is far-detuned from optical transitions, and the resulting spontaneous Raman scattering rate is measured. The observed scattering rate is lower than previous theoretical estimates. The majority of the discrepancy is explained by a more accurate treatment of the scattered photon density of states. This work establishes that, contrary to previous models, there is no fundamental limit to laser-driven quantum gates from laser-induced spontaneous Raman scattering.
4 + 2 pages, 4 + 1 figures
References in corpus (5)
- Errors in trapped-ion quantum gates due to spontaneous photon scattering
- High-Fidelity Bell-State Preparation with Ca Optical Qubits
- Blueprint for trapped ion quantum computing with metastable states
- Photon scattering errors during stimulated Raman transitions in trapped-ion qubits
- Comparison of Spontaneous Emission in Trapped Ion Multiqubit Gates at High Magnetic Fields
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