Single qubit manipulation in a microfabricated surface electrode ion trap
arXiv:1306.1269 · doi:10.1088/1367-2630/15/9/093018
Abstract
We trap individual Yb ions in a surface trap microfabricated on a silicon substrate, and demonstrate a complete set of high fidelity single qubit operations for the hyperfine qubit. Trapping times exceeding 20 minutes without laser cooling, and heating rates as low as 0.8(0.1) quanta/ms indicate stable trapping conditions in these microtraps. A coherence time of more than one second, high fidelity qubit state detection and single qubit rotations are demonstrated.
References in corpus (9)
- Towards fault-tolerant quantum computing with trapped ions
- Manipulation and Detection of a Trapped Yb+ Ion Hyperfine Qubit
- A microfabricated surface-electrode ion trap for scalable quantum information processing
- Realization of the quantum Toffoli gate with trapped ions
- Individual addressing of trapped ions and coupling of motional and spin states using rf radiation
- Efficient Fiber Optic Detection of Trapped Ion Fluorescence
- Design, Fabrication, and Experimental Demonstration of Junction Surface Ion Traps
- Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation
- A microfabricated ion trap with integrated microwave circuitry
Cited by in corpus (15)
- Large Scale Modular Quantum Computer Architecture with Atomic Memory and Photonic Interconnects
- Demonstration of the trapped-ion quantum-CCD computer architecture
- Ion-trap measurements of electric-field noise near surfaces
- Engineering of Microfabricated Ion Traps and Integration of Advanced On-Chip Features
- Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses
- Experimental protocol for high-fidelity heralded photon-to-atom quantum state transfer
- Hidden Inverses: Coherent Error Cancellation at the Circuit Level
- State selective detection of hyperfine qubits
- Telecom Quantum Photonic Interface for a Ca Single-Ion Quantum Memory
- Electric Vector Potential Approach in Electrostatics: The Surface Electrode
- Heat flow reversal in a trapped-ion simulator
- Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages
- A silicon-based ion trap chip protected from semiconductor charging
- Expansion Formula For the Magnetic Field of a Periodically Deformed Circular Current Loop
- Review of Superconducting Qubit Devices and Their Large-Scale Integration