A silicon-based ion trap chip protected from semiconductor charging
arXiv:2411.13955 · doi:10.1088/2058-9565/add04c
Abstract
Silicon-based ion trap chips can benefit from existing advanced fabrication technologies, such as multi-metal layer techniques for two-dimensional architectures and silicon photonics for the integration of on-chip optical components. However, the scalability of these technologies may be compromised by semiconductor charging, where photogenerated charge carriers produce electric potentials that disrupt ion motion. Inspired by recent studies on charge distribution mechanisms in semiconductors, we developed a silicon-based chip with gold coated on all exposed silicon surfaces. This modification significantly stabilized ion motion compared to a chip without such metallic shielding, a result that underscores the detrimental effects of exposed silicon. With the mitigation of background silicon-induced fields to negligible levels, quantum operations such as sideband cooling and two-ion entangling gates, which were previously infeasible with the unshielded chip, can now be implemented.
References in corpus (20)
- Demonstration of a small programmable quantum computer with atomic qubits
- Demonstration of the trapped-ion quantum-CCD computer architecture
- Benchmarking an 11-qubit quantum computer
- A Race Track Trapped-Ion Quantum Processor
- Integrated multi-wavelength control of an ion qubit
- Demonstration of fault-tolerant universal quantum gate operations
- Integrated optical multi-ion quantum logic
- Fast quantum logic gates with trapped-ion qubits
- Ion Trap in a Semiconductor Chip
- Trapped-ion probing of light-induced charging effects on dielectrics
- Normal modes of trapped ions in the presence of anharmonic trap potentials
- A Site-Resolved 2D Quantum Simulator with Hundreds of Trapped Ions
- Benchmarking a trapped-ion quantum computer with 30 qubits
- Quantum Control of Qubits and Atomic Motion Using Ultrafast Laser Pulses
- Distance scaling of electric-field noise in a surface-electrode ion trap
- Engineering the Quantum Scientific Computing Open User Testbed (QSCOUT): Design details and user guide
- Multi-site Integrated Optical Addressing of Trapped Ions
- Single qubit manipulation in a microfabricated surface electrode ion trap
- Photo-induced charge carrier dynamics in a semiconductor-based ion trap investigated via motion-sensitive qubit transitions
- Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages